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Boosting Near infrared sensitivity using pyramid surfaces

From Sony: OCL: On Chip Lens PSD: Pyramid Shaped Diffractor (lightguide) DTI: Deep Trench Isolation Near-infrared Sensitivity Enhancement of a Back-illuminated Complementary Metal Oxide Semiconductor Image Sensor with a Pyramid Surface for Diffraction Structure, I. Oshiyama, S. Yokogawa, H. Ikeda, Y. Ebiko, T. Hirano, S. Saito, T. Oinoue, Y. Hagimoto, H. Iwamoto, Sony Semiconductor Boosting Near-Infrared Sensitivity in CMOS Imagers: Backside-illuminated CMOS image sensors are ubiquitous in camera phones, and there is a growing demand for them to be able to handle near-infrared (NIR) light frequencies so that they can be used in iris scanning, facial recognition and motion-sensing applications. However, the NIR-sensitivity of silicon CMOS image sensors has been inadequate. The simplest way to enhance it would be to make the photo-absorption layer thicker, but that would require substantial capital investment in manufacturing equipment like high-energy ion implanters to be ab...